发明名称 |
CARBON DOPED OXIDE DEPOSITION |
摘要 |
A METHOD FOR CARBON DOPED OXIDE (CDO) DEPOSITION IS DESCRIBED. ONE METHOD OF DEPOSITION INCLUDES PROVIDING A SUBSTRATE (100) AND INTRODUCING OXYGEN TO A CARBON DOPED OXIDE PRECURSOR IN THE PRESENCE OF THE SUBSTRATE (100). A CARBON DOPED OXIDE FILM IS FORMED ON THE SUBSTRATE (100). IN ANOTHER METHOD THE SUBSTRATE (100) IS PLACED ON A SUSCEPTOR (135) OF A CHEMICAL VAPOR DEPOSITION APPARATUS. A BACKGROUND GAS IS INTRODUCED ALONG WITH THE CARBON DOPED OXIDE PRECURSOR AND OXYGEN TO FORM THE CARBON DOPED OXIDE FILM ON THE SUBSTRATE (100)
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申请公布号 |
MY122888(A) |
申请公布日期 |
2006.05.31 |
申请号 |
MYPI20023703 |
申请日期 |
2002.10.03 |
申请人 |
INTEL CORPORATION |
发明人 |
ANDIDEH, EBRAHIM;PETERSON, KEVIN L.;BIELEFELD, JEFFREY D. |
分类号 |
H01L21/31;C23C16/40;H01L21/316;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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