发明名称 CARBON DOPED OXIDE DEPOSITION
摘要 A METHOD FOR CARBON DOPED OXIDE (CDO) DEPOSITION IS DESCRIBED. ONE METHOD OF DEPOSITION INCLUDES PROVIDING A SUBSTRATE (100) AND INTRODUCING OXYGEN TO A CARBON DOPED OXIDE PRECURSOR IN THE PRESENCE OF THE SUBSTRATE (100). A CARBON DOPED OXIDE FILM IS FORMED ON THE SUBSTRATE (100). IN ANOTHER METHOD THE SUBSTRATE (100) IS PLACED ON A SUSCEPTOR (135) OF A CHEMICAL VAPOR DEPOSITION APPARATUS. A BACKGROUND GAS IS INTRODUCED ALONG WITH THE CARBON DOPED OXIDE PRECURSOR AND OXYGEN TO FORM THE CARBON DOPED OXIDE FILM ON THE SUBSTRATE (100)
申请公布号 MY122888(A) 申请公布日期 2006.05.31
申请号 MYPI20023703 申请日期 2002.10.03
申请人 INTEL CORPORATION 发明人 ANDIDEH, EBRAHIM;PETERSON, KEVIN L.;BIELEFELD, JEFFREY D.
分类号 H01L21/31;C23C16/40;H01L21/316;H01L21/768 主分类号 H01L21/31
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