| 摘要 |
A semiconductor device is made by, implanting, into a channel formation region of a semiconductor substrate, first dopant ions, which are heavy ions with a relatively large mass number to form a dopant implantation layer; and implanting second dopant ions into the semiconductor substrate to form an amorphous layer that expands deeper than the dopant implantation layer. Fabrication of a semiconductor device, comprises implanting, into a channel formation region of a semiconductor substrate (100), first dopant ions of a first conductivity type, which are heavy ions with a relatively large mass number to form a dopant implantation layer (103) in the channel formation region; and implanting second dopant ions into the semiconductor substrate to form an amorphous layer (104) expanding from the substrate surface to a region of the substrate deeper than the dopant implantation layer. An independent claim is included for a semiconductor device, comprising a semiconductor substrate including a diffused channel layer in the upper portion; and a gate electrode (102) formed above the semiconductor substrate with a gate insulating film (101) interposed in between. The diffused channel layer is formed by, implanting dopant ions, which are heavy ions with a relatively large mass number. It contains germanium ions. |
