发明名称 Semiconductor device and method of fabricating the same
摘要 A conductor layer (13) is formed on one surface of a semiconductor substrate (11) having a functional element formed therein, with an insulating layer (12) interposed therebetween, and a through hole (TH1) is then formed at a predetermined position in the semiconductor substrate. Furthermore, a support sheet is attached to the other surface of the semiconductor substrate (11), and the conductor layer (13) and the top of the support sheet are connected using a wire (14). A portion in which the conductor layer (13), the wire (14) and the through hole (TH1) are formed is sealed with resin (16), and the support sheet is removed. Furthermore, a conductor layer (15) is formed on an end portion (14a) of the wire (14) which is exposed from the other surface of the semiconductor substrate (11).
申请公布号 EP1662566(A2) 申请公布日期 2006.05.31
申请号 EP20050257092 申请日期 2005.11.17
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 KOIZUMI, NAOYUKI
分类号 H01L23/48;H01L23/31 主分类号 H01L23/48
代理机构 代理人
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