Semiconductor light emitting device

摘要

The first mirror comprises a metal layer (4). An intermediate layer (3) is coated on the side of the metal layer facing the active zone. This layer (3) comprises a material which is opaque to light and electrically-conductive. The light-emitting semiconductor component is provided with an optical resonator for production of incoherent radiation as a resonant cavity light-emitting diode (RCLED). It alternatively operates with an external optical resonator producing coherent radiation as a vertical external cavity, surface-emitting laser (VECSEL).