| 发明名称 |
Memory wordline spacer |
| 摘要 |
A memory includes a semiconductor substrate and a charge-trapping dielectric layer. First and second bitlines are implanted and a wordline layer is deposited and formed. A doped wordline spacer layer is deposited and a doped wordline spacer is formed adjacent to the wordline.
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| 申请公布号 |
US7053446(B1) |
申请公布日期 |
2006.05.30 |
| 申请号 |
US20040864142 |
申请日期 |
2004.06.08 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SAHOTA KASHMIR S.;KAMAL TAZRIEN;RAMSBEY MARK T. |
| 分类号 |
H01L29/792;H01L21/336;H01L21/8234;H01L21/8246;H01L27/115 |
主分类号 |
H01L29/792 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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