| 摘要 |
A gate electrode < 13 > is provided to fill up a trench < 300 > while covering its opening. Assuming that W<SUB>G </SUB>represents the diameter (sectional width) of a head portion of the gate electrode < 13 > located upward beyond a P-type base layer < 4 > and an N<SUP>+</SUP>-type emitter diffusion layer < 51 >, W<SUB>T </SUB>represents the diameter (sectional width) of an inner wall of a linearly extending portion of the trench < 300 > and W<SUB>C </SUB>represents the distance between the boundary (the inner wall of the trench 300 ) between a gate oxide film < 11 > and the P-type base layer < 4 > and an end surface of the gate electrode < 13 > located upward beyond the trench < 300 > in a section of the trench < 300 >, relation of either W<SUB>G</SUB>>=1.3.W<SUB>T </SUB>or W<SUB>C</SUB>>=0.2 mum holds between these dimensions.
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