| 摘要 |
A magnetic memory device includes a memory cell array including MTJ elements provided at the coordinates (x, y). First write lines extend in a direction neither perpendicular nor parallel to the magnetization easy axis direction of the MTJ elements. One and the other end of one first write line pass an upper or lower periphery of the memory cell array and a left or right periphery of the memory cell array, respectively. The first write lines and second write lines sandwich the MTJ elements. First write line drivers are connected to both ends of the first write lines, one and the other end of a pair of the first write line drivers connected to ends of one first write lines are located outside the upper or lower periphery and outside the left or right periphery, respectively. Second write line drivers are connected to both ends of the second write lines.
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