发明名称 Electrodeposition film forming method, and semiconductor apparatus
摘要 An electrodeposition film forming method includes forming an electrodeposited film of an electrodeposition coating material having good thermal fluidity by a first electrodeposition; forming an electrodeposition film in a very small through-hole provided on a conductive or semiconductive substrate; removing electrodeposited film at an opening portion of the through-hole under a wet-coated condition; and hardening the electrodeposition film to obtain a flat portion other than the opening portion. Then, a second electrodeposition film of an electrodeposition coating material having good thermal fluidity is formed around the opening portion and is hardened to coat uncoated portions of the opening portion remaining after the first deposition. Accordingly, a flat inner surface of the through-hole is obtained, any exposed portions of an underlayer at the opening of the through-hole are covered and the opening of the through-hole is maintained.
申请公布号 US7052991(B2) 申请公布日期 2006.05.30
申请号 US20040014678 申请日期 2004.12.17
申请人 CANON KABUSHIKI KAISHA 发明人 MIZUNO MASAKI
分类号 C25D13/00;H01L21/44;C25D5/02;C25D13/06;H01L21/768 主分类号 C25D13/00
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