Capacitor having a high dielectric layer of BTS or BTZ in a semiconductor device, and fabrication method thereof,申请号KR20030087976-传众专利搜索

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发明名称	Capacitor having a high dielectric layer of BTS or BTZ in a semiconductor device, and fabrication method thereof
摘要
申请公布号	KR100585114(B1)	申请公布日期	2006.05.30
申请号	KR20030087976	申请日期	2003.12.05
申请人		发明人
分类号	H01L27/108;H01L21/00;H01L21/02;H01L21/314;H01L21/8242;H01L29/94;H01L31/119	主分类号	H01L27/108
代理机构		代理人
主权项
地址

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