| 摘要 |
A polishing composition of the present invention, which is used in polishing the edge of a wafer for semiconductor devices, effectively suppresses remaining amounts of abrasives on the wafer. The polishing composition includes silicon dioxide, an alkaline compound, a water-soluble polymer, and water. The average primary particle diameter D<SUB>SA </SUB>of the silicon dioxide is at least 40 nm. The ratio D<SUB>95</SUB>/D<SUB>5 </SUB>of the silicon dioxide is no more than 3.8. The value D<SUB>95</SUB>/D<SUB>5</SUB>/D<SUB>SA </SUB>of the silicon dioxide is no more than 0.07. |
