CdTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

A CdTe compound semiconductor single crystal useful for a substrate for optical devices such as an infrared sensor is provided by specifying a resistivity and a contained quantity of impurities of the CdTe compound semiconductor single crystal. The CdTe compound semiconductor single crystal for optical devices contains a first group (1A) element of 5×10¹⁴-6×10¹⁵cm^-3 in the crystal. A total quantity of a 13th (3B) group element and a 17th (7B) group element contained in the crystal is less than 2×10¹⁵cm^-3 and is less than the total quantity of the first (1A) group element, and the resistivity is permitted to be 10-10⁴?cm.