发明名称 FIELD-EFFECT TRANSISTOR, PROCESS FOR PRODUCING THE SAME AND ELECTRONIC APPLIANCE UTILIZING THE SAME
摘要 <p>A field-effect transistor comprising semiconductor layer (14) containing a part functioning as a channel region. The semiconductor layer (14) contains, as constituents thereof, multiple conductive microparticles (52) dispersed in the semiconductor layer (14), organic semiconductor molecules (53) linking the microparticles (52) to each other through chemical bonding to the microparticles (52), and cyclic molecules. The organic semiconductor molecules (53) each comprise a p-electron conjugated chain as a main chain, the p-electron conjugated chain clathrated by cyclic molecules.</p>
申请公布号 WO2006054709(A1) 申请公布日期 2006.05.26
申请号 WO2005JP21270 申请日期 2005.11.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;OSAKA UNIVERSITY;TAKEUCHI, TAKAYUKI;HARADA, KENJI;KAMBE, NOBUAKI;TERAO, JUN 发明人 TAKEUCHI, TAKAYUKI;HARADA, KENJI;KAMBE, NOBUAKI;TERAO, JUN
分类号 H01L51/05;H01L29/786 主分类号 H01L51/05
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