发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain the titled image having a high durability against an oxygen plasma by incorporating a mixture (A) of a condensate of a specific silicon contg. phenol and a formaldehyde and a novolak resin, and (B) a compd. contg. a quinone diazide compd. to the titled composition. CONSTITUTION:The titled composition contains the mixture (A) of the condensate of the silicon contg. phenol shown by the formula and the formaldehyde and the novolak resin, and (B) the compd. contg. the quinone diazide compd. In the formula, R1-R3 are each a lower alkyl or a hydroxyphenyl group, R4 is a hydrogen atom, an lower alkyl, a lower trialkyl silyl group or a hydroxyl group, the mixing ratio of the condensate of the silver contg. phenol and the formaldehyde to the novolak resin is preferably (1:1)-(1:10) by the weight basis. The compounding ratio of the component (a) and the component (B) is selected to be <=55wt.pts. the component (A) per 10wt.pts. the component (B). If the component (A) is >=100wt.pts., the fidelity of the obtd. mask pattern of the image reduces and the transfer property of the obtd. image decreases.
申请公布号 JPS6286357(A) 申请公布日期 1987.04.20
申请号 JP19850227580 申请日期 1985.10.12
申请人 TOKYO OHKA KOGYO CO LTD 发明人 OBARA HIDEKATSU;ASAUMI SHINGO;NAKAYAMA TOSHIMASA
分类号 G03C1/72;G03F7/023;G03F7/075;H01L21/027 主分类号 G03C1/72
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