| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for enabling ultra-fine processing of fins, and also to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises first and second fins 101a formed with semiconductor layers provided oppositely with each other on a semiconductor substrate 200, an active region 101b provided connected with the first and second fins to supply the predetermined voltage to the first and second fins, and gate electrodes 121, 122 provided across the first and second fins at the location keeping the predetermined interval to the active region on a insulating film 114 formed on the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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