METHOD OF PRODUCING DOPED POLYSILICON LAYERS AND POLYSILICON LAYERED STRUCTURES AND METHOD OF STRUCTURIZING LAYERS AND LAYERED STRUCTURES WHICH COMPRISE POLYSILICON LAYERS,申请号KR19980005261-传众专利搜索

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发明名称	METHOD OF PRODUCING DOPED POLYSILICON LAYERS AND POLYSILICON LAYERED STRUCTURES AND METHOD OF STRUCTURIZING LAYERS AND LAYERED STRUCTURES WHICH COMPRISE POLYSILICON LAYERS
摘要
申请公布号	KR100567969(B1)	申请公布日期	2006.05.25
申请号	KR19980005261	申请日期	1998.02.20
申请人		发明人
分类号	H01L21/205;H01L21/3065	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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