| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of measuring at high precision even under such condition that shrinkage of an object is easy to take place. <P>SOLUTION: After a resist film is formed on a Si substrate, a circuit pattern for a semiconductor integrated circuit, first L-like measurement patterns 3a and 3b, and crisscross alignment monitor patterns 4a and 4b, are formed on the resist film. The Si substrate is patterned based on these patterns. Then, a poly-Si film is formed above the Si substrate, and the resist film is formed on the poly-Si film. On the resist film, a circuit pattern for a semiconductor integrated circuit, second L-like measurement patterns 13a and 13b, and a crisscross alignment monitor pattern 15b, are formed. Here, the second L-like measurement pattern is oriented in such direction that the first L-like measurement pattern is rotated by 180° in top view. With these patterns as a mask, the poly-Si film is patterned to form a gate electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
