| 摘要 |
The photodiode includes a substrate of a first semiconductor material and an isolating layer of a second semiconductor material. The second semiconductor material is of opposite doping character or type to the first semiconductor material. The isolating layer of the second semiconductor material is implanted with one or more wells of the first and second semiconductor materials and the substrate is separated from the isolating layer of the second semiconductor material by an epitaxial layer of the first semiconductor material.
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