| 摘要 |
The method of metallization in the fabrication of an integrated circuit device comprises the steps as follows. First, a dielectric layer overlying a semiconductor substrate is provided. The dielectric layer has a top surface and a plurality of openings. Next, a metal layer is formed on the dielectric layer and filling the openings. Subsequently, a first removing process is performed to partially removing the metal layer. A first annealing process is performed on the metal layer. Finally, a second removing process is performed to remove the metal layer completely to leave the metal layer only within the openings.
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