发明名称 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
摘要 The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.
申请公布号 US2006108326(A1) 申请公布日期 2006.05.25
申请号 US20050294853 申请日期 2005.12.06
申请人 CABOT MICROELECTRONICS 发明人 DYSARD JEFFREY M.;JOHNS TIMOTHY P.
分类号 C09K13/00;B44C1/22;C03C15/00;H01L21/302 主分类号 C09K13/00
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