| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of storing a silicon wafer which can remarkably increase the number of the wafers to be stored by maintaining the preventing effect of metal contamination which causes the defective oxide film breakdown voltage of the wafer for a long period of time. SOLUTION: A chelating agent and an acetic acid are added in liquid for storing used for the method of storing the silicon wafer. Particularly, the chelating agent whose concentration is 0.0001-0.01 wt.%, and the acetic acid whose concentration is 0.01-1 wt.%, are added, and the pH of the liquid for storing is set to 4-7. The chelating agent is a citric acid, a malonic acid, an oxalic acid or a phosphoric acid. COPYRIGHT: (C)2006,JPO&NCIPI
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