| 摘要 |
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free SAF structure. The array has a finite magnetic field programming window Hwin represented by the equation H<SUB>win</SUB>≈(<img id="custom-character-00001" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>Hsat<img id="custom-character-00002" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00901.TIF" alt="custom character" img-content="character" img-format="tif"/>-Nsigma<SUB>sat</SUB>)-(<img id="custom-character-00003" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>Hsw<img id="custom-character-00004" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00901.TIF" alt="custom character" img-content="character" img-format="tif"/>+Nsigma<SUB>sw</SUB>), where <img id="custom-character-00005" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>Hsw<img id="custom-character-00006" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00901.TIF" alt="custom character" img-content="character" img-format="tif"/> is a mean switching field for the array, <img id="custom-character-00007" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00900.TIF" alt="custom character" img-content="character" img-format="tif"/>Hsat<img id="custom-character-00008" he="3.13mm" wi="1.02mm" file="US20060108620A1-20060525-P00901.TIF" alt="custom character" img-content="character" img-format="tif"/> is a mean saturation field for the array, and Hsw for each memory element is represented by the equation H<SUB>SW</SUB>≅√{square root over (H<SUB>k</SUB>H<SUB>SAT</SUB>)}, where H<SUB>k </SUB>represents a total anisotropy and H<SUB>SAT </SUB>represents an anti-ferromagnetic coupling saturation field for the free SAF structure of each memory element. N is an integer greater than or equal to 1. H<SUB>k</SUB>, H<SUB>SAT</SUB>, and N for each memory element are selected such that the array requires current to operate that is below a predetermined current value.
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