摘要 |
PROBLEM TO BE SOLVED: To provide a silicon production method that even when a by-product hydrogen chloride gas is contained in a high concentration in the deposition reaction waste gas in depositing silicon from chlorosilane and hydrogen, performs the high efficiency removal and recovery of hydrogen chloride to enable equipment cost and space reduction. SOLUTION: The silicon production method comprises the following steps (a) to (e): step (a) of reacting chlorosilane with hydrogen on a heated substrate to form silicon, step (b) of cooling the reaction waste gas to -10°C or lower to condense and remove part of the chlorosilane, step (c) of passing the hydrogen gas containing chlorosilane, hydrogen, and hydrogen chloride through a layer packed with active carbon having an average pore diameter of 1×10-<SP>9</SP>to 3×10<SP>-9</SP>m to adsorb and remove chlorosilane to 0.01 vol.% or lower based on the hydrogen, step (d) of subsequently passing the effluent hydrogen gas through a layer packed with active carbon having an average pore diameter of 5×10<SP>-10</SP>to 1×10<SP>-9</SP>m to adsorb and remove the hydrogen chloride therefrom to 0.01 vol.% or lower, and step (e) of recirculating the hydrogen purified by steps (b) to (d) to the silicon deposition step (a). COPYRIGHT: (C)2006,JPO&NCIPI
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