摘要 |
<p>The MOSFET has a semiconducting body (1) of one conductor type with first and second main surfaces, first semiconducting zones of the other type embedded in the body on the side of the first main surface and zones of the second type embedded in each first zone, drift zones of the first type next to at least one first zone, gate electrodes, first and second electrodes and auxiliary electrodes (25) formed inside trenches and representing extensions of contact holes for contacting the first and second zones and electrically connected to the first electrode.</p> |