发明名称 MOS field effect transistor has auxiliary electrodes formed inside trenches and representing extensions of contact holes for contacting first and second zones and electrically connected to first electrode
摘要 <p>The MOSFET has a semiconducting body (1) of one conductor type with first and second main surfaces, first semiconducting zones of the other type embedded in the body on the side of the first main surface and zones of the second type embedded in each first zone, drift zones of the first type next to at least one first zone, gate electrodes, first and second electrodes and auxiliary electrodes (25) formed inside trenches and representing extensions of contact holes for contacting the first and second zones and electrically connected to the first electrode.</p>
申请公布号 DE102004045944(A1) 申请公布日期 2006.05.24
申请号 DE20041045944 申请日期 2004.09.22
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI, JENOE
分类号 H01L29/78 主分类号 H01L29/78
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