Edge termination for silicon power devices

摘要

A silicon semiconductor die comprises a heavily doped silicon substrate (701) and an upper layer (702) comprising doped silicon of a first conduction type disposed on the substrate (701). The upper layer comprises a well region (703) of a second, opposite conduction type adjacent an edge termination zone (705) that comprises a layer of a material having a higher critical electric field than silicon. Both the well region (703) and adjacent edge termination zone (705) are disposed at an upper surface of the upper layer, and an oxide layer (706) overlies the upper layer and the edge termination zone. The invention also concerns a process for forming a silicon die having edge termination. <IMAGE>