发明名称 |
Method and apparatus for programming nonvolatile memory |
摘要 |
Programming nonvolatile memory cells is affected by the program disturb effect which causes data accuracy issues with nonvolatile memory. Rather than masking the voltage conditions that cause the program disturb effect, voltages are applied to neighboring nonvolatile memory cells, which takes advantage of the program disturb effect to program multiple cells quickly.
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申请公布号 |
EP1659594(A1) |
申请公布日期 |
2006.05.24 |
申请号 |
EP20050011344 |
申请日期 |
2005.05.25 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YI-YING, LIAO;CHIH-CHIEH, YEH;WEN-JER, TSAI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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