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发明名称
METHOD FOR PRODUCING LOW DEFECT SILICON SINGLE CRYSTAL DOPED WITH NITROGEN
摘要
申请公布号
KR100582241(B1)
申请公布日期
2006.05.24
申请号
KR19990021975
申请日期
1999.06.14
申请人
发明人
分类号
C30B29/06;C30B15/00;H01L21/208
主分类号
C30B29/06
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代理人
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地址
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