发明名称 |
Integrated capacitor |
摘要 |
A new capacitor device having two terminals is achieved. The device comprises a plurality of first conductive lines overlying a substrate. Each of the first conductive lines is connected to one of the capacitor device terminals. The adjacent first conductive lines are connected to opposite terminals. The first conductive lines comprise a plurality of conductive materials. A plurality of second conductive lines overlie the plurality of first conductive lines. Each of the second conductive lines is connected to one of the capacitive device terminals. Adjacent second conductive lines are connected to opposite terminals. Any second conductive line overlying any first conductive line is connected to an opposite terminal. The second conductive lines comprises a plurality of conductive materials. A first dielectric layer overlies the substrate and lies between the adjacent first conductive lines. A second dielectric layer lies between the first conductive lines and the second conductive lines.
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申请公布号 |
US7050290(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20040768916 |
申请日期 |
2004.01.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TANG DENNY;LIN WEN-CHIN;LAI LI-SHYUE;CHEN CHUN-HON;CHANG CHUNG-LONG |
分类号 |
H01G4/008;H01G4/20;H01G4/228;H01L21/02;H01L23/522 |
主分类号 |
H01G4/008 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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