| 摘要 |
A gate oxide film covering a light-incident surface of a photodiode includes an opening exposing a central region of the light-incident surface of the photodiode. After forming the opening in the gate oxide film serving as a light-incident surface protecting film, an antireflection film of silicon nitride, covering the light-incident surface of the photodiode is deposited. A side surface of the antireflection film is spaced from the field oxide film that is proximate the photodiode and that provides electrical isolation. Another side surface of the antireflection film faces a transfer gate of the device and is disposed on the gate oxide film near the opening. That side surface of the antireflection film is spaced from the transfer gate.
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