发明名称 |
Advanced exposure techniques for programmable lithography |
摘要 |
Advanced techniques for programmable photolithograhy provide enhanced resolution and other aspects of a photolithography system. The pseudo-inverse of a matrix is applied to the results of a calculation to control exposure energies.
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申请公布号 |
US7050155(B2) |
申请公布日期 |
2006.05.23 |
申请号 |
US20020283322 |
申请日期 |
2002.10.30 |
申请人 |
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发明人 |
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分类号 |
G03B27/32;G03B27/42;G03B27/54;G03F7/20 |
主分类号 |
G03B27/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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