发明名称 Electro-optical device and manufacturing method thereof
摘要 An electro-optical device having high operation performance and reliability, and a manufacturing method thereof. A TFT structure which is strong agains hot carrier injection is realized by disposing a Lov region 207 in an n-channel TFT 203 which forms a driver circuit. Further, Loff regions 217 to 220 and offset region are disposed in an n-channel TFT 304 which forms a pixel section, and a TFT structure of low OFF current value is realized. Further, by reducing the n-type impurity element contained in Loff regions 217 to 220 to approximately 1x10<SUP>16 </SUP>to 5x10<SUP>18 </SUP>atoms/cm<SUP>3</SUP>, further reduction of OFF current can be performed.
申请公布号 US7049634(B2) 申请公布日期 2006.05.23
申请号 US20040889800 申请日期 2004.07.13
申请人 发明人
分类号 H01L29/04;G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786 主分类号 H01L29/04
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