| 摘要 |
The objective of the present invention is to provide a gray tone mask, which comprises a thick resist pattern forming part, a thin resist pattern forming part, and a non-resist region forming part, and is used in the manufacturing steps of thin-film transistor substrate which at least contains thick resist pattern formed by the use of the thick resist pattern forming part to carry out the step of deformation, wherein the gray tone mask can has a preferable transmittance distribution in a semitransmitting part and high pattern accuracy of pattern corresponding to a channel part. The gray tone mask is constituted by forming, decided according to the positive or negative resist on the substrate to be transferred, a thick resist pattern forming part as a light shielding part and a non-resist region forming part as a light transmitting part respectively on the substrate to be transferred, which comprises a thick resist pattern forming part, a thin resist pattern forming part, and a non-resist region forming part. In the gray tone mask used in the manufacturing steps of the above-mentioned thin-film transistor substrate, a light semitransmitting film is formed on the light semitransmitting part, while a light shielding film is formed on a light shielding part; the thick resist pattern forming part becomes the opposing part of the source electrode and the drain electrode, and forms the desired vacant margin region in the side of channel part. |
