PROGRAMMABLE MATRIX ARRAY WITH CHALCOGENIDE MATERIAL
摘要
<p>A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.</p>
申请公布号
WO2006052846(A2)
申请公布日期
2006.05.18
申请号
WO2005US40210
申请日期
2005.11.04
申请人
OVONYX, INC.;LOWREY, TYLER;PARKINSON, WARD;WICKER, GUY