| 摘要 |
PROBLEM TO BE SOLVED: To control a substrate bias to minimize a leak current. SOLUTION: A semiconductor integrated circuit device 1 comprises: a leak detecting circuit 2 for detecting a leak current using MOSFETs 10A and 10B for leak detection; a control circuit for generating a control signal in accordance with an output of the leak detecting circuit 2; a substrate bias generating circuit 4 for changing a substrate bias in accordance with the control signal; and a circuit 5 to be controlled including an MOSFET having the same characteristics as the MOSFETs 10A and 10B for leak detection. The leak detecting circuit 2 detects a substrate leak current which increases as the substrate bias becomes deeper, and a sub-threshold leak current which decreases as the substrate bias becomes deeper, and if the substrate leak current is smaller than the sub-threshold leak current, the substrate bias is made deeper, or if greater, the control signal is sent to the substrate bias generating circuit 4 so that the substrate bias is made shallow. COPYRIGHT: (C)2006,JPO&NCIPI |
