发明名称 Reliability test method for a ferroelectric memory device
摘要 A reliability test method for a ferroelectric memory device having a ferroelectric capacitor evaluates, under acceleration conditions (acceleration temperature T<SUB>2 </SUB>and test time t<SUB>2</SUB>), whether or not life of retention characteristics of the ferroelectric memory device is guaranteed under actual use conditions (guarantee temperature T<SUB>1 </SUB>and guarantee time t<SUB>1</SUB>). The method includes the step of determining test time t<SUB>2 </SUB>that is required to evaluate whether the life of the retention characteristics is guaranteed or not, based on temperature dependence of change with time of a bit line voltage that is generated when data written to the ferroelectric memory device is read.
申请公布号 US2006104133(A1) 申请公布日期 2006.05.18
申请号 US20050228317 申请日期 2005.09.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NOMA ATSUSHI
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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