APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION

摘要

Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD) . In one embodiment, a chamber contains a chamber lid (832) containing an expanding channel (834) formed within a thermally insulating material (838) either directly within the chamber lid or formed within a funnel liner attached thereon. The chamber further includes at least one conduit (841 a-d) coupled to a gas inlet within the expanding channel and positioned to provide a gas flow in a circular direction, such as a vortex, a helix or a spiral. The chamber may contain a retaining ring (819), an upper process liner (822), a lower process liner (824) or a slip valve liner (826) . Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.