发明名称 FORMING METHOD FOR CONNECTIVE BUMP, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To form uniform electrodes having no wettability/expandability with a narrow pitch. <P>SOLUTION: A forming method for connective bumps has a process for forming on a substrate 11 having electrodes 13 in predetermined places a mask 24M having openings in the corresponding places to the electrodes 13; a process for forming in each opening up to its predetermined height a first metal film 31 having low wettability/expandability in relation to a foundational metal; a process for forming in each opening a second metal film repeatedly on the first metal film; a process for fusing the first and second metals as the mask is left; and a process for removing the mask thereafter. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006128493(A) 申请公布日期 2006.05.18
申请号 JP20040316676 申请日期 2004.10.29
申请人 FUJITSU LTD 发明人 SHIMIZU KOZO
分类号 H01L21/60 主分类号 H01L21/60
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