发明名称 SEMICONDUCTOR MEMORY DEVICE EQUIPPED WITH ON-DIE TERMINATION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with an on-die termination circuit for largely reducing power consumption, while the data are being inputted to a semiconductor device. <P>SOLUTION: This semiconductor memory device is provided with a data input/output pad DQ, a data input buffer 60 for buffering and transmitting data to be transmitted via the data input/output pad DQ, an on-die termination pad DQODT to which an on-die termination voltage to be transmitted from a board to which a memory device has been connected is applied, an on-die termination resistance RTT3 arranged in between the on-die termination pad DQODT and the data input/output pad DQ and a switch for connecting the on-die termination resistance RTT3 to the on-die termination pad DQODT, while the data are inputted to the data input buffer 60. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006129423(A) 申请公布日期 2006.05.18
申请号 JP20050072388 申请日期 2005.03.15
申请人 HYNIX SEMICONDUCTOR INC 发明人 KANG HEE-BOK;AN SHINKO
分类号 H03K19/0175 主分类号 H03K19/0175
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