SEMICONDUCTOR DEVICE INCLUDING MULTI-BIT NON-VOLATILE MEMORY CELL AND MANUFACTURE METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a multi-bit non-volatile memory cell and its manufacture method. SOLUTION: The non-volatile semiconductor device includes a unit cell, comprising a plurality of transistors the source and drain regions of which are shared, wherein each of the plurality of transistors includes at least one control gate and at least one charge accumulation region, and each control gate is connected to at least one control voltage for shifting the threshold voltage of each transistor. Due to this, it is possible to effectively increase the degree of integration and efficiently reduce the cost per megabyte of a flash EEPROM. COPYRIGHT: (C)2006,JPO&NCIPI