| 摘要 |
The amorphous emitter of known heterocontact solar cells is arranged on the top of the crystalline absorber facing the light and absorbs incident light which therefore cannot contribute to the generation of charge carriers in th e absorber. A transparent conductive oxide layer (TCO) as the cover layer whic h has a negative effect on the pn transition, can be avoided. The inventive heterocontact solar cell (HKS) has an inverted geometry of its layer structu re and thus an inverted heterocontact. The amorphous emitter (EM) is arranged o n the bottom (LU) of the crystalline absorber (AB) facing away from the light. The absorber (AB) is only covered by a transparent antireflection coating (ARS) on its top (LO) facing the light, said coating, due to the material chosen, is at the same time the electrically effective passivation layer (PS ), thereby avoiding absorption losses. The energy recuperation time regarding t he material, time and energy requirements can be reduced by the low-temperature production of the emitter (EM) and the antireflection coating (ARS) by plasm a CVD processes at 250 ~C to 350 ~C. The upper contact structure (OKS) penetrates the transparent antireflection coating (ARS) digitately, the lowe r contact structure (UKS) is configured as a thin large-surface metal layer (M S).
|
