| 摘要 |
PROBLEM TO BE SOLVED: To etch a wafer having a large aperture of at least 12 inches uniformly. SOLUTION: A stage electrode 102 and a gas supply electrode 103 are opposingly installed in an etching treatment chamber 100. The gas supply surface of the gas supply electrode 103 is divided into first, second, and third gas supply regions 200, 201 and 202. Control is made individually by using first, second, and third gas flow rate control systems 107, 108 and 109 corresponding to the gas supply regions. By the first, second, and third gas supply regions 200, 201 and 202, the flow rate of etching gas and the flow rate ratio of gas whose ionization voltage is different are optimized to supply the gas. COPYRIGHT: (C)2006,JPO&NCIPI
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