ULTRA-SHALLOW ARSENIC JUNCTION FORMATION IN SILICON GERMANIUM
摘要
<p>In one aspect, the present invention provides a method of forming junctions in a silicon-germanium layer (20). In this particular embodiment, the method comprises implanting a dopant (80) into the silicon-germanium layer (20) and implanting fluorine (70) into the silicon-germanium layer (20).</p>
