发明名称 |
Copper interconnect wiring and method of forming thereof |
摘要 |
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.
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申请公布号 |
US2006105570(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20050269382 |
申请日期 |
2005.11.08 |
申请人 |
EPION CORPORATION |
发明人 |
HAUTALA JOHN J.;SHERMAN STEVEN R.;LEARN ARTHUR J.;GEFFKEN ROBERT M. |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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