| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element which removes a protruded part of the intermediate layer of the element while suppressing the deformations of its cap layer and its third clad layer. SOLUTION: The second etching process of the manufacturing method of a semiconductor laser element has a step for covering with a resist 48 outer peripheries 46 of a third clad layer 33 and the etching stop layer 31 of the element which reach extendedly its intermediate layer 34; a step for etching its intermediate layer 34 and its cap layer 35 while excluding unavoidably at least its third clad layer 33; and a step for removing thereby the protruded part 45 of its intermediate layer 34 and preventing its cap layer 35 from being etched undesirably. As a result, its ridge having no irregularity with respect to the direction nearly vertical to its laminating direction is so manufactured as to prevent the increase of its operational voltage and the reduction of its external differential quantum efficiency. COPYRIGHT: (C)2006,JPO&NCIPI
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