| 摘要 |
An apparatus and a method of activating an impurity atom doped into a semiconductor material use of a resonant principle. Impurity atoms are doped into the semiconductor material, and microwaves having the same frequency as a natural frequency of vibration of the impurity are applied to the semiconductor material. The intensity of the vibrations of the impurity atom is increased by the resonant principle. Thus, a mean free path of the impurity atom is extended, so that the impurity atoms combine with a substance constituting the semiconductor material to create a carrier (free electrons or holes). Accordingly, only the impurity atoms in the region doped with the impurity are selectively activated, preventing the impurity from undesirably being introduced into another region, thereby improving an operating characteristic of the device.
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