| 摘要 |
<p>A memory cell array (1) includes a plurality of memory cells arranged in a matrix and storing data by use of n values exhibiting first, second through n-th states (where n is a natural number equal to or greater than two). Before performing a write operation for storing data into a first memory cell of the memory cell array, a control circuit performs, if at least a second memory cell adjacent to the first memory cell exhibiting the first state and not having reached a first threshold voltage, a write operation to the second memory cell until the first threshold voltage is reached.</p> |
