发明名称 CLEANING METHOD FOR SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To improve reliability by establishing the optimal content density of a medicinal solution containing a complexing agent capable of removing metal in SC-1 cleaning for use in the cleaning of a semiconductor substrate. SOLUTION: A method comprises steps of cleaning the front surface of a semiconductor substrate with a semiconductor front surface treatment agent containing alkali, a hydrogen peroxide, and water as constituents, and rinsing the front surface of the semiconductor substrate with ultrapure water after cleaning. When a complexing agent is added to at least one of the semiconductor front surface treatment agent and ultrapure water for rinse, the density of the complexing agent is set to be in a range of 0.9 to 1.8 times of the saturated density of the complexing agent added to metal in the solution. This makes it possible to expect an improvement in reliability by a metal removing effect by the complexing agent and suppresses reduction in reliability caused by carbon pollution to be small. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006128708(A) 申请公布日期 2006.05.18
申请号 JP20050331374 申请日期 2005.11.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HARADA YOSHIHISA;NIWA MASAAKI
分类号 H01L21/304;C11D7/04;C11D7/18;C11D17/08 主分类号 H01L21/304
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