| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a water-based slurry composition having excellent planarization performance that can be used for chemical mechanical planarization (CMP) for a layer formed in a manufacturing process of a semiconductor device. <P>SOLUTION: This water-based slurry composition for chemical mechanical planarization (CMP) comprises (1) metal oxide abrasive powder with 0.5 to 10 weight%, (2) a primary polyacrylic acid of 1 million to 3 million weight average molecular weight or combination with its dielectric, and a secondary polyacrylic acid of 2 million to 8 million weight average molecular weight with 0.1 to 5 weight%, where the weight average molecular weight of the primary polyacrylic acid or its dielectric is more than 0.5 million smaller than that of the secondary polyacrylic acid or its dielectric, and (3) a basic neutralizer with 0.1 to 2 weight%, where the primary and secondary polyacrylic acids or their dielectrics interact with the abrasive powder and form a complex of 100 to 5,000 nm size. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
