METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal which can produce a large-diameter and high quality SiC single crystal and to provide an SiC wafer comprising the SiC single crystal obtained from the method. SOLUTION: The method for producing an SiC single crystal comprises a step for cutting away or grooving a part of the peripheral region 15 of an SiC substrate 1, and a step for growing the SiC single crystal on the surface of the substrate which has been cut away or grooved as the seed substrate. The SiC wafer is composed of the SiC single crystal obtained from the method for producing an SiC single crystal and has the number of small tilt angle grain boundaries of 10 or less. COPYRIGHT: (C)2006,JPO&NCIPI