发明名称 |
Nonvolatile Memory Device and Method for Manufacturing the Same |
摘要 |
The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same. The nonvolatile memory device comprises: a gate of a stack type structure formed on an active region of a semiconductor substrate; a source/drain formed in the substrate at both sides of the gate of the stack type structure; an interlayer insulating film formed on the substrate where the source/drain is formed and covering the gate of the stack type structure; a contact connected to the source/drain through the interlayer insulating film; a plurality of conductive patterns formed in the interlayer insulating film of the region not adjacent to the contact; and an electrode pad formed on the conductive patterns.
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申请公布号 |
US2006102951(A1) |
申请公布日期 |
2006.05.18 |
申请号 |
US20060275494 |
申请日期 |
2006.01.10 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE DA-SOON |
分类号 |
H01L23/52;H01L29/788;H01L21/3205;H01L21/336;H01L21/8247;H01L27/115;H01L29/76;H01L29/792 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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