发明名称 FILM DEPOSITION METHOD
摘要 In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.
申请公布号 KR20060049130(A) 申请公布日期 2006.05.18
申请号 KR20050099672 申请日期 2005.10.21
申请人 TOKYO ELECTRON LIMITED;KONDOH EIICHI 发明人 MATSUZAWA KOUMEI;SATO HIROSHI;KOMIYA TAKAYUKI;KONDOH EIICHI;MATSUMOTO KENJI
分类号 H01L21/208 主分类号 H01L21/208
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